Researchers at the National Institute of Standards and Technology (NIST) and IBM have developed a trenching technology that can be used to create components through directed self-directed assembly. Researchers say the gold nanoparticles work like a snow blade and stir at indium phosphide or other semiconductor layers to form nanochannels. This technique is expected to be used to integrate lasers, sensors, wave guides and other optical components on so-called lab-on-a-chip components to support disease diagnosis, screening Experimental materials and drugs, DNA testing and more. The channeling capabilities of the gold particles were accidentally discovered in a nanowire formation experiment that failed due to contaminants; NIST chemistry researcher Babak Nikoobakht said: "We were very disappointed with the beginning," but the research team was unwilling , Found that the pollutant is water. Scanning electron micrographs of this experiment show that the water vapor-binding gold nanoparticles result in long, straight nanochannels. Surface-directed nanochannel electron microscopy images were formed on the surface of indium phosphide semiconductors; those nanochannels were formed using a gold-catalyzed vapor-liquid-solid state etching process and the locations were determined by the pattern of the deposited gold pattern Definition (Source: NIST) The team then figured out the chemical mechanisms and the necessary conditions for the etching process to selectively coat the semiconductor surface with gold and heat it; once the heating is complete, the underlying indium phosphide melts into the gold nanoparticles to form Gold alloy. They then introduced the heated water vapor into the system and found that when the water vapor temperature reached above 440 degrees Celsius, long V-shaped nanochannels were formed; the straight-line paths below those channels were repeated by the regular repeating crystal lattice within the crystalline semiconductor Dominated. Researchers can also apply the above techniques to gallium phosphide and indium arsenide, both of which belong to the 35th family; these semiconductors are used to make LEDs or to support communications , High-speed electronics and other applications. Nikoobakht said he believes the etching process can be used to make channel patterns on silicon and other materials after it has been adjusted. Compile: Judith Cheng (Reference text: Researchers Claim Self-directed Assembly Breakthrough, by Dylan McGrath) Knitted Jacket,Knitted Coat,Men′S Jacket Rizhao Eshine Trading Co., Ltd. , http://www.nswinterwear.com